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What is the ceramic substrate sputtering metallization process?

Word:[Big][Middle][Small] Mobile page qrcode 2019/9/21     Viewed:    
  The method of vapor phase deposition metallization, such as vacuum evaporation, vacuum sputtering, ion plating, etc. in the metallization of ceramic substrates has been widely used in recent years. Today's Xiaobian mainly shares the sputtering process of ceramic substrates.

Ceramic substrate

  The sputtering process is divided into two-stage sputtering, four-stage sputtering and high-grade sputtering, etc., in which DC sputtering is the simplest and is also the substrate form of the sputtering process.

  First, the vacuum vessel is placed in a high vacuum, and is filled with a certain pressure of argon gas, and then DC negative high voltage (1~7kv) is applied to the cathode sputtering target which is spaced from the ceramic support level (at the ground potential), thus causing the glow Discharge. The positive and negative ions of the discharge gas are bombarded to the target of negative high pressure, and the hard metal is deposited on the ceramic to form a metallized film. Generally, the first layer of metal deposited by sputtering is molybdenum, tungsten, tantalum, vanadium, etc., and then a layer of metal such as gold, silver, palladium, platinum or copper which is easily wetted by solder is sputtered. Naturally, it is also possible to plate nickel or copper on the top sputter layer.

  First evacuate the system to 6.7 times 10 -? Pa, close the dispersing pump valve, let pure argon gas fill the system through the valve until the pressure is (1 ~ 4 times 10 - 1Pa. The tungsten cathode is heated, will be about 8 In a cylinder of ~250px diameter, hold it for 15~20min to form an argon discharge. Multiply the 10~3T magnetic field to limit the plasma to a cylinder of 8~250px diameter for 15~20min to form a plasma "wipe". The ceramic appearance has a preheating effect. The sputtering target is subjected to a negative high voltage. It is sputtered for 5 minutes when there is a baffle, and then the baffle is removed to allow the target metal to be directly sputtered onto the ceramic until the desired thickness is used. The ionized argon gas bombards the surface of the workpiece by ions. At this time, the target negative pressure requirement is lower, generally 1~3kv, and the sputtering time is 3~5min.

  The first metal layer sputtered onto the ceramic part is required to be vacuum-tight, and then the second layer of metal to be sputtered is dissolved in the first layer of metal and is easily wetted by the solder. The first layer can be very thin, but the second layer needs to meet the thickness (1um) to prevent the solder from dissolving in the second layer.

  A general practical process: three layers of Ti0.1um/Mo0.15~0.5um and Cu5~10um are sputtered successively.

  The sputter-metallized ceramic parts are then soldered by a vacuum furnace or an argon gas top, and in the case of sputtering three layers of metal, they are directly connected to the copper member by means of dispersion welding. The tensile strength of the high alumina porcelain seal is above 100 MPa, and the sealing strength of the oxidized enamel and metal is about 85 MPa.

  Compared with the vapor deposition method, the sputtering metallization can deposit a high-melting-point metal film at a relatively low temperature, and has a film capable of producing a uniform thickness over a large area, a deposited film bonded to a ceramic substrate, and a deposited alloy and The strength of information films such as oxides.

  Sputtering is a relatively simple ceramic-metallization process that is easy to handle and suitable for any type of ceramic, especially enamel enamel. Because the operating temperature is low during metallization, which is similar to the "cold" process, the ceramic does not pose or rupture during metallization. The metal layer is very thin, so the ceramic can be processed to the exact size and performance before metallization. When required, after metallization at room temperature, heat treatment at high temperature (600 ~ 1000 ° C) for a period of time is appropriate.

  The ceramic substrate is introduced in small series. The experiment proves that the sputtering is mainly because the neutral particles on the target are shot by high-energy ions and are deposited on the substrate through the working gas. The energy range of the ions is generally between 10 and 5000 ev. Under ion energy, the ratio of sputtered neutral particles to secondary electrons and secondary ions is about 100:10:1. Its momentum transfer is similar to billiard behavior.
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