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What is electronic packaging ceramic substrate

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  With the rise and application of power devices,especially third-generation semiconductors,semiconductor devices are gradually developing in the direction of high power,miniaturization,integration,and multi-function.,Put forward higher requirements for the performance of the package substrate.Ceramic substrates(also known as ceramic circuit boards)have the characteristics of high thermal conductivity,good heat resistance,low thermal expansion coefficient,high mechanical strength,insulation,corrosion resistance and radiation resistance,and are widely used in electronic device packaging.This article introduces the physical properties of commonly used ceramic substrate materials(including Al2O3,AlN,Si3N4,BeO,SiC and BN,etc.).)Analyzed and introduced the preparation principles,process flow,technical characteristics and characteristics of various ceramic substrates(including TFC,TPC,DBC,DPC,AMB,LAM,and various 3D ceramic substrates,etc.).)Are emphasized

  Di-generation semiconductors represented by silicon(Si)and germanium(Ge)materials are mainly used in the field of data computing,laying the foundation for the microelectronics industry.The second-generation semiconductors,represented by gallium arsenide(GaAs)and indium phosphide(InP),are mainly used in the communications field to manufacture high-performance microwave,millimeter wave and light-emitting devices,laying the foundation for the information industry.With the development of technology and the continuous extension of application requirements,the limitations of the two are gradually reflected,and it is difficult to meet the requirements of high frequency,high temperature,high power,high energy efficiency,resistance to harsh environments,portability and miniaturization.The third-generation semiconductor materials represented by silicon carbide(SiC)and gallium nitride(GaN)have the characteristics of wide band gap,high critical breakdown voltage,high thermal conductivity,and high carrier saturation drift velocity.

  The electronic devices they manufacture can work stably at temperatures of 300°C or higher(also called power semiconductors or high-temperature semiconductors).It is the"core"of solid-state light sources(such as LED),lasers(LD),power electronics(such as IGBT),focused photovoltaic(CPV),microwave radio frequency(RF)and other devices.It has broad application prospects in semiconductor lighting,automotive electronics,next-generation mobile communications(5G),new energy and new energy vehicles,high-speed rail transit,consumer electronics and other fields.It is expected to break through the bottleneck of traditional semiconductor technology.In optoelectronic devices,power electronics,Automotive electronics,aerospace,deep well drilling and other fields have important application value,and will play an important role in energy conservation and emission reduction,industrial transformation and upgrading,and promotion of new economic growth points.

ceramic substrate

  With the development of power devices(including LED,LD,IGBT,CPV,etc.).),heat dissipation has become a key technology affecting device performance and reliability.For electronic devices,the effective life of the device is usually reduced by 30%to 50%for every 10°C increase.Therefore,choosing appropriate packaging materials and processes to improve the heat dissipation capacity of the device has become a technical bottleneck for the development of power devices.Take the high-power LED package as an example,because 70%~80%of the input power is converted into heat(only about 20%~30%is converted into light energy),the LED chip area is small,and the device power density is high(above 100W/cm2),Heat dissipation has become a key issue that must be solved in high-power LED packaging.If the heat generated by the chip cannot be dissipated by the LED in time,a large amount of heat will accumulate inside the LED,and the junction temperature of the chip will gradually increase,reducing the performance of the LED(such as reduced luminous efficiency,wavelength red shift,etc.),on the other hand Thermal stress will be generated inside the LED device,causing a series of reliability problems(such as service life,color temperature change,etc.).).

  The package substrate mainly uses the high thermal conductivity of the material to conduct heat from the chip(heat source)to achieve heat exchange with the external environment.For power semiconductor devices,the package substrate must meet the following requirements:

  (1)High thermal conductivity.At present,power semiconductor devices are packaged with thermoelectric separation,and most of the heat generated by the devices is transferred through the package substrate.The substrate with good thermal conductivity can protect the chip from thermal damage.

  (2)Match the thermal expansion coefficient of the chip material.The power device chip itself can withstand high temperatures,and changes in current,environment,and working conditions will change its temperature.Since the chip is directly mounted on the package substrate,the matching of the thermal expansion coefficient will reduce the thermal stress of the chip and improve the reliability of the device.

  (3)Good heat resistance,meeting the high temperature use requirements of power devices,and good thermal stability.

  (4)Good insulation,meeting electrical interconnection and equipment insulation requirements.

  (5)High mechanical strength,meeting the strength requirements during device processing,packaging and application.

  (6)The price is suitable for mass production applications.
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